Quantum Dots in Star of David (‘666’) Network Form Application

• The Symbol/Mark they will use for their Quantum Dot, Hydrogel, Mark of The Beast Vaccine is the Star of David, Satanic ‘666’ Hexagram, IMO. It is an occult Satanic symbol for calling forth evil spirits and Satan. Friendly warning to all Zionist Christians pushing this Satanic ‘666’ Hexagram. Be careful what you wish for. You may be struck by God. As in struck dead or permanently incapacitated to protect the Christian sheeple from the Mark of the Beast. Here are evidence. Emphasis mine:
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• Strain Mapping at the Atomic Scale in Highly Mismatched Heterointerfaces
  by Ana María Sánchez,* Juan Gabriel Lozano,Rafael García,Miriam Herrera,Sandra Ruffenach, Olivier Briot, and David González, https://www.researchgate.net/
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  Abstract
  A complete characterization of dislocation network in a highly mismatched interface with high spatial resolution has been performed. The interface between InN quantum dots and a (0001) GaN substrate contains three noninteracting sets of regularly-spaced misfit dislocations lying along <110> directions. The network has a “Star of David” form, with each star bounding a hexagonal region which is pseudomorphic. These misfit dislocations form a threading dislocation network at the island edges due to free surface forces.
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• Strain Relief Analysis of InN Quantum Dots Grown on GaN
  by Juan G Lozano, corresponding author1 Ana M Sánchez,1 Rafael García,1 Sandra Ruffenach,2 Olivier Briot,2 and David González1, https://www.ncbi.nlm.nih.gov/
  Abstract
  We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the  directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system.
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  In the superposition of the resulting maps, Fig. ​Fig.2b,2b, a series of lines can be clearly observed, where the red lines correspond to areas with a large difference in lattice parameter relative to the GaN substrate, and therefore are related to three different sets of misfit dislocations running along the  directions. We can also see that these MDs do not interact—i.e. a “star of David” network is present. No dislocation nodes are created which would lead to the “honeycomb” network, observed in other heteroepitaxial systems [17]. Moreover, the hexagonal and triangular areas correspond to those of sharp contrast in the HRTEM image, indicating good fit, as shown in Fig. ​Fig.2b;2b; whereas the dislocation lines are related to the blurred areas and therefore indicate bad fit between the InN and the GaN substrate.
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